芯片可靠性验证RA：HTOL\HAST\HTSL

芯片可靠性验证RA：HTOLHASTHTSL

高温老化寿命试验(HTOL)

参考标准：JESD22-A108；

测试条件：

For devices containing NVM, endurance preconditioning must be performed before HTOL per Q100-005.

Grade 0: +150℃ Ta for 1000 hours.

Grade 1: +125℃ Ta for 1000 hours.

Grade 2: +105℃ Ta for 1000 hours.

Grade 3: + 85℃ Ta for 1000 hours.

Vcc (max) at which dc and ac parametric are guaranteed. Thermal shut-down shall not occur during this test.

TEST before and after HTOL at room, hot, and cold temperature.

高加速应力试验(HAST)

参考标准：JESD22-A110；

测试条件：

Plastic Packaged Parts

Grade 0: +175℃ for 1000 hours or +150℃ for 2000 hours.

Grade 1: +150℃ for 1000 hours or +175℃ for 500 hours.

Grades 2 to 3: +125℃ for 1000 hours or +150℃ for 500 hours.

Ceramic Packaged Parts

+250℃ for 10 hours or +200℃ for 72 hours.

TEST before and after HTSL at room and hot temperature.

* NOTE: Data from Test B3 (EDR) can be substituted for Test A6 (HTSL) if package and grade level requirements are met.

高温存储试验(HTSL)

参考标准：JESD22-A103 ；

测试条件：

Plastic Packaged Parts

Grade 0: +175℃ for 1000 hours or +150℃ for 2000 hours.

Grade 1: +150℃ for 1000 hours or +175℃ for 500 hours.

Grade 2 to 3: +125℃ for 1000 hours or +150℃ for 500 hours.

Ceramic Packaged Parts

+250℃ for 10 hours or +200℃ for 72 hours.

TEST before and after HTSL at room and hot temperature.

* NOTE: Data from Test B3 (EDR) can be substituted for Test A6 (HTSL) if package and grade level requirements are met.

芯片可靠性验证 ( RA)：

芯片级预处理(PC) & MSL试验 、J-STD-020 & JESD22-A113 ；

高温存储试验(HTSL), JESD22-A103 ；

温度循环试验(TC), JESD22-A104 ；

温湿度试验(TH / THB), JESD22-A101 ；

高加速应力试验(HTSL / HAST), JESD22-A110；

高温老化寿命试验(HTOL), JESD22-A108；